Submission deadline: CLOSED
Publication: September/October 2018
Guest Editors: Lizy Kurian John and Earl Swartzlander (The University of Texas at Austin)
In 1971, Leon Chua presented the theoretical basis for a passive two-terminal circuit device that he called a “memristor” (a contraction of memory and resistor). A memristor is a two-terminal device that behaves like a resistor, with the resistance depending on the history of the current passing through it. In 2008, HP Labs realized memristors in nanoscale titanium dioxide cross-point switches. The initial application has been to use memristors to implement memory on a portion of a traditional CMOS chip. The memory is referred to as RRAM (resistive RAM).
Conventional von Neumann systems fetch data from memory, process it, and store the result back in memory. The recurring fetch-process-store sequence limits computer performance. In many applications, memristor memory can act as a site for storing data, while implementing desired logic computations.
This special issue solicits papers addressing memristors as memory elements, logic elements, or combined memory/logic elements. Our interest extends from design concepts to simulation results and the implementation of experimental systems.
Topics of interest include (but are not limited to):
- Use of memristors to realize non-volatile memory, with emphasis on RRAM
- Implementation of logic elements using logical implication
- Identification of alternative techniques for performing logic
- Design of digital computational elements (adders, multipliers, dividers, and so on) with memristors
- Neural nets/machine learning implemented with RRAM/memristors
- Design of non-von Neumann systems